ST · 35-QFN (9x9)
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GANSPIN611TR STMicroelectronics GaN Gate Driver IC High Frequency
| Supply Voltage | 3.3V~20V |
| Drain blocking voltage | 650V |
| Output Current | 10A |
| Package | TFQFPN 9X9X1.05 35L |
| Operating Temperature | -40℃~125℃ |
| Packing | Tape And Reel |
| ECCN | EAR99 |
| RoHS | Ecopack2 |
High voltage half-bridge GaN power system-in-package, integrated 650V enhancement mode GaN HEMT and gate driver, integrated bootstrap diode, adjustable dV/dt, undervoltage lockout, overcurrent, interlock and thermal protection for BLDC motor drive
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